Title :
MBE growth and optical investigation of GaSb/AlSb VCSEL structures for the 1.5 μm range
Author :
Koeth, J. ; Dietrich, R. ; Forchel, A.
Author_Institution :
Wurzburg Univ., Germany
Abstract :
We have investigated the growth of VCSELs based on the GaAlSb material system by solid source molecular beam epitaxy. Laser structures with different numbers of mirror layers have been analyzed by reflectivity experiments. We observe a systematic narrowing of the cavity resonance with increasing number of mirror layers down to a FWHM of 0.9 meV (50 K). The dependence of the FWHM of the cavity resonance on the number of mirror layers and the temperature dependence of the resonance energy are found to be in good agreement with results of transfer matrix theory calculations
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser cavity resonators; molecular beam epitaxial growth; reflectivity; refractive index; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; 50 K; GaSb-AlSb; VCSEL structures; cavity resonance; mirror layers; reflectivity; resonance energy; solid source MBE growth; temperature dependence; transfer matrix theory; Buffer layers; Gallium arsenide; Laser tuning; Mirrors; Optical materials; Reflectivity; Refractive index; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711577
