Abstract :
Notice of Violation of IEEE Publication Principles
"A 12.5Gb/s electro-absorption-modulator driver using a cascode switch with dynamic biasing and adaptive RC compensation"
by Maxim, A.
in the Proceedings of the 2005 Bipolar/BiCMOS Circuits and Technology Meeting,
9-11 Oct. 2005 Page(s):98 - 102
After careful and considered review, it has been determined that the above paper is in violation of IEEE\´s Publication Principles.
Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author:
C. Turinici, D. Smith, S. Dupue, M. Gheorge, R. Johns, D. Antrik
Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge.
Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements.
Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references.A 9.953-12.5Gb/s EAM driver IC was realized in a 60GHz f/sub T/ 0.2μm SiGe HBT process. Fast switching was achieved by using a cascode output switch that minimizes the capacitive load on the pre-driver and also allows an on-chip summation of the bias and modulation currents without degrading the signal path bandwidth. A low voltage operation was achieved by generating the modulation current with a common-mode feedback loop. A dynamic biasing was used to optimally allocate the headroom voltage between the switch and its cascode devices over supply, temperature, bi- s and modulation corners. An adaptive RC compensation that tracks the modulation current was implemented to cancel the inductive behavior of the last emitter follower.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; RC circuits; circuit feedback; driver circuits; electro-optical modulation; electroabsorption; heterojunction bipolar transistors; 0.2 micron; 60 GHz; 9.953 to 12.5 Gbit/s; BiCMOS integrated circuit; HBT process; SiGe; adaptive RC compensation; bias current; capacitive load; cascode output switch; common-mode feedback loop; driver integrated circuit; dynamic biasing; electro-absorption-modulator driver; emitter follower; laser drivers; modulation current; optical communications; signal path bandwidth; BiCMOS integrated circuits; Driver circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Notice of Violation; Silicon germanium; Switches; Switching circuits;
