• DocumentCode
    2734423
  • Title

    Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks

  • Author

    Neo, W.C.E. ; Liu, X. ; Lin, Y. ; de Vreede, L.C.N. ; Larson, L.E. ; Spirito, M. ; Akhnoukh, A. ; de Graauw, A. ; Nanver, L.K.

  • Author_Institution
    DIMES, Delft Univ. of Technol., Netherlands
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    108
  • Lastpage
    111
  • Abstract
    This paper presents a 1.8GHz prototype class-AB power amplifier using a QUBIC4G (SiGe, ft = 40GHz) handset device with adaptive in- and output matching networks. The realized amplifier provides: 13dB gain, 28 dBm output power, with an efficiency greater than 33-51% over a 10dB output power control range.
  • Keywords
    Ge-Si alloys; circuit tuning; heterojunction bipolar transistors; microwave power amplifiers; varactors; 1.8 GHz; 13 dB; 40 GHz; QUBIC4G handset device; SiGe; class-AB power amplifier; hybrid HBT power amplifier; varactor-based tunable matching networks; Batteries; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Linearity; Power amplifiers; Power generation; Silicon germanium; Telephone sets; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555211
  • Filename
    1555211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734423