DocumentCode :
2734423
Title :
Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
Author :
Neo, W.C.E. ; Liu, X. ; Lin, Y. ; de Vreede, L.C.N. ; Larson, L.E. ; Spirito, M. ; Akhnoukh, A. ; de Graauw, A. ; Nanver, L.K.
Author_Institution :
DIMES, Delft Univ. of Technol., Netherlands
fYear :
2005
fDate :
9-11 Oct. 2005
Firstpage :
108
Lastpage :
111
Abstract :
This paper presents a 1.8GHz prototype class-AB power amplifier using a QUBIC4G (SiGe, ft = 40GHz) handset device with adaptive in- and output matching networks. The realized amplifier provides: 13dB gain, 28 dBm output power, with an efficiency greater than 33-51% over a 10dB output power control range.
Keywords :
Ge-Si alloys; circuit tuning; heterojunction bipolar transistors; microwave power amplifiers; varactors; 1.8 GHz; 13 dB; 40 GHz; QUBIC4G handset device; SiGe; class-AB power amplifier; hybrid HBT power amplifier; varactor-based tunable matching networks; Batteries; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Linearity; Power amplifiers; Power generation; Silicon germanium; Telephone sets; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
Type :
conf
DOI :
10.1109/BIPOL.2005.1555211
Filename :
1555211
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2734423
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