Title :
300 GHz fmax self-aligned SiGeC HBT optimized towards CMOS compatiblity
Author :
Chevalier, P. ; Barbalat, B. ; Rubaldo, L. ; Vandelle, B. ; Dutartre, D. ; Bouillon, P. ; Jagueneau, T. ; Richard, C. ; Saguin, F. ; Margain, A. ; Chantre, A.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper summarizes the work carried out to improve performances of a SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. A 300 GHz fmax is reported for a transistor sustaining high thermal budget.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; 300 GHz; BiCMOS integrated circuits technology; CMOS compatiblity; SiGeC; arsenic-doped monocrystalline emitter; millimeter wave circuits; optical communication; selective epitaxial base; self-aligned heterojunction bipolar transistor; BiCMOS integrated circuits; Boron; CMOS process; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555214
