• DocumentCode
    2734481
  • Title

    300 GHz fmax self-aligned SiGeC HBT optimized towards CMOS compatiblity

  • Author

    Chevalier, P. ; Barbalat, B. ; Rubaldo, L. ; Vandelle, B. ; Dutartre, D. ; Bouillon, P. ; Jagueneau, T. ; Richard, C. ; Saguin, F. ; Margain, A. ; Chantre, A.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    120
  • Lastpage
    123
  • Abstract
    This paper summarizes the work carried out to improve performances of a SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. A 300 GHz fmax is reported for a transistor sustaining high thermal budget.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; 300 GHz; BiCMOS integrated circuits technology; CMOS compatiblity; SiGeC; arsenic-doped monocrystalline emitter; millimeter wave circuits; optical communication; selective epitaxial base; self-aligned heterojunction bipolar transistor; BiCMOS integrated circuits; Boron; CMOS process; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555214
  • Filename
    1555214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734481