Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxy

Author

Lubyshev, D.I. ; Cai, W.Z. ; Catchen, G.L. ; Mayer, T.S. ; Miller, D.L.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

125

Lastpage

130

Abstract

Thallium incorporation in GaTlAs and InTlAs was systematically studied in solid source MBE by RHEED, Auger Electron Spectroscopy and X-ray diffraction as function of thallium concentration, substrate temperature and III/V flux ratio. Low temperature growth exhibits a (2×2) thallium-induced structure and also shows surface thallium accumulation. No evidence of binary TlAs formation was found. Auger electron spectroscopy measurements show limited thallium solubility in GaTlAs and InTlAs. X-ray diffraction measurements show the successful growth of epitaxial layers of TlGaAs with a molar fraction of Tl-0.5 and a second metal phase on the surface

Keywords

Auger effect; III-V semiconductors; X-ray diffraction; gallium arsenide; indium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; thallium compounds; Auger electron spectroscopy; GaTlAs; III/V flux ratio; InTlAs; RHEED; Tl incorporation; X-ray diffraction; epitaxial layers; solid source MBE; substrate temperature; surface thallium accumulation; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Nuclear electronics; Photonic band gap; Spectroscopy; Substrates; Surface morphology; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711578

Filename

711578