A low-cost SiGe:C BiCMOS technology with embedded flash memory and complementary LDMOS module

Author

Knoll, D. ; Fox, A. ; Ehwald, K.E. ; Heinemann, B. ; Barth, R. ; Fischer, A. ; Rucker, H. ; Schley, P. ; Scholz, R. ; Korndorfer, F. ; Senapati, B. ; Stikanov, V.E. ; Tillack, B. ; Winkler, W. ; Wolf, Ch. ; Zaumseil, P.

Author_Institution

IHP, Frankfurt, Germany

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

132

Lastpage

135

Abstract

We present a low-cost, modular BiCMOS process for wireless and mixed-signal applications. A SiGe:C bipolar module, a complementary LDMOS module, and a low-power flash memory were combined with a 0.25μm CMOS technology to enable SoC integration. The low-cost approach is demonstrated by the fact that only 29 mask steps are applied in total for the full process flow including all modules, a full suite of passives, and 5 metal layers.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MOSFET; carbon; flash memories; heterojunction bipolar transistors; low-power electronics; 0.25 micron; BiCMOS technology; CMOS technology; SiGe:C; SoC integration; bipolar module; complementary LDMOS module; embedded flash memory; heterojunction bipolar transistors; metal layers; mixed-signal application; wireless application; BiCMOS integrated circuits; CMOS memory circuits; CMOS technology; Flash memory; Heterojunction bipolar transistors; Implants; Integrated circuit technology; Nonvolatile memory; Schottky diodes; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555217

Filename

1555217