DocumentCode :
2734574
Title :
High performance, low complexity vertical PNP BJT integrated in a 0.18μm SiGe BiCMOS technology
Author :
Voegeli, B.T. ; Gray, P.B. ; Rainey, B.A. ; Strieker, A.D. ; Feilchenfeld, N.B. ; Watson, K.M. ; St Onge, S.A. ; Dunn, J.S. ; Schmidt, N.T. ; Newton, K.M. ; Rascoe, J.S.
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT, USA
fYear :
2005
fDate :
9-11 Oct. 2005
Firstpage :
136
Lastpage :
140
Abstract :
An isolated vertical PNP BJT with fT and fMAX of 20GHz available as a modular component in a 0.18μm SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device breakdown; 0.18 micron; 20 GHz; BiCMOS technology; SiGe; bipolar junction transistor; heterojunction bipolar transistor; vertical PNP BJT; BiCMOS integrated circuits; CMOS process; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Resistors; Silicon germanium; Thin film inductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
Type :
conf
DOI :
10.1109/BIPOL.2005.1555218
Filename :
1555218
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2734574
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