A 7-bit, 18 GHz SiGe HBT comparator for medium resolution A/D conversion

Author

Li, Xiangtao ; Kuo, Wei-Min Lance ; Lu, Yuan ; Krithivasan, Ramkumar ; Chen, Tianbing ; Cressler, John D. ; Joseph, Alvin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

144

Lastpage

147

Abstract

An ultra-high-speed, master-slave comparator using an ECL configuration is presented. Implemented in a commercially-available 0.18 μm 120 GHz SiGe HBT BiCMOS technology, the comparator core occupies a compact area of only 140 × 325 μm². Operating off a 3.5 V power supply, the comparator consumes 82 mW, excluding clock and output buffers. The comparator can operate at an 18 GHz sampling rate with 7.1 bits of resolution, and at a 20 GHz sampling rate with 4.9 bits of resolution. To our knowledge, this comparator achieves the highest resolution when compared to other stand-alone comparators in the literature operating at similar sampling rates.

Keywords

BiCMOS digital integrated circuits; Ge-Si alloys; analogue-digital conversion; comparators (circuits); heterojunction bipolar transistors; logic design; 0.18 micron; 120 GHz; 18 GHz; 20 GHz; 3.5 V; 7 bit; 82 mW; ECL configuration; HBT BiCMOS technology; HBT comparator; SiGe; emitter coupled logic; heterojunction bipolar transistor; master-slave comparator; medium resolution A/D conversion; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Latches; Master-slave; Power supplies; Sampling methods; Silicon germanium; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555220

Filename

1555220