An 8-bit, 12 GSample/sec SiGe track-and-hold amplifier

Author

Lu, Yuan ; Kuo, Wei-Min Lance ; Li, Xiangtao ; Krithivasan, Ramkumar ; Cressler, John D. ; Borokhovych, Yevgen ; Gustat, Hans ; Tillack, Bernd ; Heinemann, Bernd

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

148

Lastpage

151

Abstract

We present the design and implementation of an ultra-high-speed SiGe BiCMOS track-and-hold amplifier (THA) for use in high-speed analog-to-digital converters. The use of a degeneration inductor in the input buffer significantly improves the performance of the THA. The THA was fabricated in a commercially-available 0.25 μm 200 GHz SiGe HBT BiCMOS process technology. The circuit occupies an area of 1.2 mm², and exhibits -49.5 dBc of total harmonic distortion (THD) when operated at a sampling frequency of 12.5 GHz with an input frequency of 3.0 GHz. Operating from a 3.5 V supply, the total power consumption is 0.7 W. To our knowledge, this circuit is the fastest 8-bit Si-based THA achieved to date.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; analogue-digital conversion; harmonic distortion; millimetre wave amplifiers; sample and hold circuits; 0.25 micron; 0.7 W; 12.5 GHz; 200 GHz; 3.5 V; 30 GHz; 8 bit; BiCMOS track-and-hold amplifier; HBT BiCMOS process technology; SiGe; degeneration inductor; high-speed analog-to-digital converters; total harmonic distortion; ultra-high-speed amplifier; Analog-digital conversion; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Power supplies; Sampling methods; Silicon germanium; Total harmonic distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555221

Filename

1555221