Title :
A 12 GHz SiGe BiCMOS limiting amplifier with wide dynamic range peak detect circuitry for use in 10GBit optical systems
Author :
Fratti, Roger A. ; Moinian, Shahriar A.
Author_Institution :
Agere Syst., Inc., Allentown, PA, USA
Abstract :
A SiGe limiting amplifier with 30dB gain, 16dB input return loss, 2mV sensitivity and integrated peak detect circuitry has been designed. The process used was a 0.13 micron BICMOS graded base HBT technology. Peak detect circuitry was implemented at the input to the limiting amplifier to maximize dynamic range as opposed to conventional peak detect circuits that follow high gain stages.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; limiters; microwave amplifiers; peak detectors; 0.13 micron; 12 GHz; 16 dB; 2 mV; 30 dB; BICMOS graded base HBT technology; BiCMOS limiting amplifier; SiGe; integrated peak detect circuitry; optical systems; BiCMOS integrated circuits; Dynamic range; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optical losses; Optical sensors; Semiconductor optical amplifiers; Silicon germanium; Stimulated emission;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555222
