DocumentCode
2734739
Title
A transit time model for thin SOI Si/SiGe HBT
Author
Fregonese, S. ; Avenier, G. ; Maneux, C. ; Chantre, A. ; Zimmer, T.
Author_Institution
Lab. de Microelectronique EXL, Univ. Bordeaux 1, Talence, France
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
184
Lastpage
187
Abstract
A new transit time model for semi-depleted SOI Si/SiGe HBTs is presented. The particular architecture of this SOI HBT involves two modes of operation. Both modes, as well as the transition from one to the other are investigated by a physical description. The corresponding equations are implemented into a compact model. Simulation results from this model are compared to measurements in the DC and AC regime.
Keywords
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; silicon; Si-SiGe; thin SOI heterojunction bipolar transistor; transit time model; BiCMOS integrated circuits; Capacitance; Electric variables; Equations; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor process modeling; Silicon germanium; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555228
Filename
1555228
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