DocumentCode :
2734753
Title :
An extended two-port method for the determination of the base and emitter resistance
Author :
Huszka, Z. ; Seebacher, E. ; Pflanzl, W.
Author_Institution :
Austriamicrosystems AG, Unterpremstatten, Germany
fYear :
2005
fDate :
9-11 Oct. 2005
Firstpage :
188
Lastpage :
191
Abstract :
An approach exploiting the joint information in h11 and h21 is suggested for extracting the base and emitter resistance of bipolar transistors. Based on the complete small signal equivalent, robust formulae are presented capturing all error terms that may have influence on the result.
Keywords :
electric resistance measurement; equivalent circuits; heterojunction bipolar transistors; semiconductor device measurement; base resistance; bipolar transistors; emitter resistance; extended two-port method; Analytical models; Bipolar transistors; Capacitance; Data mining; Equivalent circuits; Frequency; Hydrogen; Impedance; Noise robustness; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
Type :
conf
DOI :
10.1109/BIPOL.2005.1555229
Filename :
1555229
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2734753
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