• DocumentCode
    2734753
  • Title

    An extended two-port method for the determination of the base and emitter resistance

  • Author

    Huszka, Z. ; Seebacher, E. ; Pflanzl, W.

  • Author_Institution
    Austriamicrosystems AG, Unterpremstatten, Germany
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    188
  • Lastpage
    191
  • Abstract
    An approach exploiting the joint information in h11 and h21 is suggested for extracting the base and emitter resistance of bipolar transistors. Based on the complete small signal equivalent, robust formulae are presented capturing all error terms that may have influence on the result.
  • Keywords
    electric resistance measurement; equivalent circuits; heterojunction bipolar transistors; semiconductor device measurement; base resistance; bipolar transistors; emitter resistance; extended two-port method; Analytical models; Bipolar transistors; Capacitance; Data mining; Equivalent circuits; Frequency; Hydrogen; Impedance; Noise robustness; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555229
  • Filename
    1555229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734753