Analisis of internal reflectivity of silicon ELO PV cells obtained by LPE

Author

Olchowik, M. ; Cieslak, K. ; Gulkowski, S. ; Kaminski, A. ; Fave, A.

Author_Institution

Inst. of Phys., Lublin Univ. of Technol., Lublin, Poland

fYear

2010

fDate

20-25 June 2010

Abstract

This work contains analysis of a SiO<;sub>2<;/sub> dielectric geometry influence on a epitaxial lateral overgrowth (ELO) thin films and solar photo-conversion efficiency. Layers used in the experiment were obtained in LPE (Liquid Phase Epitaxy) process in the same thermodynamical conditions: starting temperature of growth: 1193K, temperature difference ΔT=60K, ambient gas: Ar, metallic solvent: Sn+Al and in a different cooling rates: 0,25K/min and 0,75K/min. Also we used various dielectric masks with a different geometry: grid opened in SiO<;sub>2<;/sub> layer along <;110> and <;112> directions on a p+ boron doped (111) silicon substrate, where silicon dioxide covers from 70% up to 90% of the silicon surface. Results of the analyzes show correlation between efficiency and percentage of SiO<;sub>2<;/sub> coverage and velocity of crystallization on obtained solar cells.

Keywords

liquid phase epitaxial growth; reflectivity; silicon compounds; solar cells; SiO₂; dielectric geometry; epitaxial lateral overgrowth thin film; internal reflectivity; liquid phase epitaxy; solar cell; solar photoconversion efficiency; temperature 1193 K; Cooling; Epitaxial growth; Photovoltaic cells; Photovoltaic systems; Silicon; Silicon compounds; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5614219

Filename

5614219