Title :
iDD pulse response testing applied to complex CMOS ICs
Author :
Beasley, J.S. ; Righter, A.W. ; Apodaca, C.J. ; Pour-Mozafari, S. ; Huggett, D.
Author_Institution :
New Mexico State Univ., Las Cruces, NM, USA
Abstract :
This paper presents test results for detecting defects in complex ICs by analyzing the changes observed in the power-on transient power supply currents for the IC. This test technique, called iDD pulse response testing simultaneously pulses the VDD and V SS power supply rails while applying a fixed midrange bias voltage to all inputs to the DUT. The resulting power on transient current signature is then analyzed for the presence of abnormal behavior. Two methods of analyzing the transient current signature waveform are compared for two types of complex CMOS ICs. The type of defects detected by the test as well as applications of this method to production test are discussed
Keywords :
CMOS integrated circuits; SRAM chips; automatic test equipment; integrated circuit testing; neural nets; production testing; spectral analysis; time-domain analysis; transients; waveform analysis; FFT; SRAM; VDD; VSS; abnormal behavior; bias voltage; complex CMOS IC; defects detection; iDD pulse response testing; neural network; power supply rails; production test; transient current signature waveform; Circuit testing; Current supplies; Emulation; Integrated circuit testing; Microcontrollers; Pulsed power supplies; Rails; Transient analysis; Variable structure systems; Voltage;
Conference_Titel :
Test Conference, 1997. Proceedings., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-4209-7
DOI :
10.1109/TEST.1997.639591
