Title :
Experimental comparison of Ic-Vce parameters and large-signal performance for III-V HBTs
Author :
Cismaru, Cristian ; Zampardi, Peter J. ; Welser, Roger E.
Author_Institution :
Skyworks Solutions Inc., Newbury Park, CA, USA
Abstract :
In this work, we experimentally explore the correlation between DC parameters extracted from the device Ic-Vce curve and large-signal load-pull performance. We define a set of "saturation parameters" from the Ic-Vce curve that allow for comparisons of different materials and technologies. These parameters are then compared to typical load-pull parameters. Our results show that the assumption that DC parameters correlate to the PAE is only valid close to class A operation. As more realistic conditions are used (towards class AB and class E), this assumption is no longer valid.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; semiconductor device measurement; DC parameters; Ic-Vce parameters; heterojunction bipolar transistor; large-signal load-pull performance; power amplifier; saturation parameters; Current measurement; Gain measurement; Heterojunction bipolar transistors; III-V semiconductor materials; Knee; Power generation; Power measurement; Radio frequency; Statistical analysis; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555234