• DocumentCode
    2734843
  • Title

    Experimental comparison of Ic-Vce parameters and large-signal performance for III-V HBTs

  • Author

    Cismaru, Cristian ; Zampardi, Peter J. ; Welser, Roger E.

  • Author_Institution
    Skyworks Solutions Inc., Newbury Park, CA, USA
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    212
  • Lastpage
    215
  • Abstract
    In this work, we experimentally explore the correlation between DC parameters extracted from the device Ic-Vce curve and large-signal load-pull performance. We define a set of "saturation parameters" from the Ic-Vce curve that allow for comparisons of different materials and technologies. These parameters are then compared to typical load-pull parameters. Our results show that the assumption that DC parameters correlate to the PAE is only valid close to class A operation. As more realistic conditions are used (towards class AB and class E), this assumption is no longer valid.
  • Keywords
    III-V semiconductors; heterojunction bipolar transistors; semiconductor device measurement; DC parameters; Ic-Vce parameters; heterojunction bipolar transistor; large-signal load-pull performance; power amplifier; saturation parameters; Current measurement; Gain measurement; Heterojunction bipolar transistors; III-V semiconductor materials; Knee; Power generation; Power measurement; Radio frequency; Statistical analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555234
  • Filename
    1555234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2734843