Title :
On the optimization of lateral pnp BJTs found in BiCMOS process technologies
Author :
Zhao, Enhai ; El-diwany, Monir ; Cressler, John D. ; Shibley, James ; Sadovnikov, Alexei ; Kocoski, Dimitar ; Krakowski, Tracey L.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present a comprehensive investigation aimed at optimizing the performance of lateral pnp BJTs found in BiCMOS technologies to a level suitable for analog, IF/RF circuit applications. Alternative base profiles, LDD implantations conditions, and device geometries are quantitatively assessed, as well as the path of adapting low-voltage (LV) pMOS vs. high-voltage (HV) pMOS device design points for viable lateral pnp BJTs. The resultant dc, ac and low-frequency noise characteristics are addressed.
Keywords :
BiCMOS integrated circuits; bipolar transistors; BiCMOS process technologies; ac characteristics; base profiles; dc characteristics; device geometries; lateral pnp bipolar junction transistor; low-frequency noise characteristics; pMOS device design; Analog computers; BiCMOS integrated circuits; CMOS technology; Circuit noise; Degradation; Design optimization; Drives; Low-frequency noise; Rail to rail amplifiers; Semiconductor device noise;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555235
