Title :
Identification and analysis of a new BJT parametric mismatch phenomenon
Author :
Wils, Nicole ; Tuinhout, Hans ; Ewert, Tony ; van Berkum, Jurgen ; Kaiser, Monja ; Weemaes, Robbert
Author_Institution :
Device Modelling Group, Philips Res., Eindhoven, Netherlands
Abstract :
In this paper we show that discrepancies that were occasionally observed in the base current mismatch area scaling of a 0.25 μm BICMOS technology are due to a new mismatch phenomenon. We discuss how the cause of the effect was identified through electrical and TEM device analysis. These analyses helped to spot and solve a potential yield limiter in the technology.
Keywords :
BiCMOS integrated circuits; bipolar transistors; semiconductor device models; 0.25 micron; BJT parametric mismatch phenomenon; BiCMOS process technology; TEM device analysis; analogue circuits; base current mismatch; bipolar junction transistor; device physics; electrical device analysis; silicon bipolar process technology; Area measurement; BiCMOS integrated circuits; Cause effect analysis; Current measurement; Fluctuations; Geometry; Laboratories; Physics; Silicon; Transmission electron microscopy;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555237
