Title :
Modeling, simulation and implementation of a passive mixer in 130nm CMOS technology and scaling issues for future technologies
Author :
Komoni, Krenar ; Sonkusale, Sameer
Author_Institution :
Electr. & Comput. Eng. Dept., Tufts Univ., Medford, MA
Abstract :
In this paper, modeling, simulation, and implementation of double-balanced passive mixer are shown and examined. We analyze the performance of the mixer in terms of conversion gain (GC), 1-dB compression point, and noise figure (NF). We will show the accuracy of our model and analyses when compared with simulation and measured results for a 130 nm technology based mixer design. We introduce a mixerpsilas figure-of-merit (FOMMIXER) and briefly show that as CMOS process technology evolves, the double-balanced passive mixer architecture will become more favorable and yield improved performance.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit modelling; mixers (circuits); 1-dB compression point; CMOS technology; conversion gain; double-balanced passive mixer; figure-of-merit; modeling; noise figure; scaling issues; simulation; size 130 nm; CMOS process; CMOS technology; Computational modeling; Noise figure; Performance analysis; Performance gain; RF signals; Radio frequency; Semiconductor device modeling; Voltage;
Conference_Titel :
Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on
Conference_Location :
Knoxville, TN
Print_ISBN :
978-1-4244-2166-4
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2008.4616823