Characteristics of SiGe device fabricated by SiGe BiCMOS technology and its application to a 5.8 GHz MMIC down-conversion mixer

Author

Lee, Sang-Heung ; Lee, Ja-Yol ; Kim, Sang-Hoon ; Bae, Hyun-Cheol ; Lee, Seung-Yun ; Woo Kim, Bo ; Kang, Jin-Yeong

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

232

Lastpage

235

Abstract

In this paper, a 5.8 GHz MMIC down-conversion mixers are designed and fabricated on chip using SiGe BiCMOS process technology. To fabricate a SiGe HBT, we use a RPCVD system to grow a base epitaxial layer, and have adopted LOCOS isolation to separate the device and device terminals. This mixer is integrated on chip with RF/LO matching circuits, RF/LO input balun circuits, and IF output balun circuit. The measured results of the fabricated mixer show conversion gain of 5.5 dB, LO to RF isolation of 44 dB, and LO to IF isolation of 40 dB, IIP3 of 1.8 dBm. The chip size of the fabricated mixer is 1.9 mm × 1.2 mm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC mixers; bipolar integrated circuits; chemical vapour deposition; heterojunction bipolar transistors; 1.2 mm; 1.9 mm; 5.5 dB; 5.8 GHz; BiCMOS technology; IF output balun circuit; LOCOS isolation; MMIC down-conversion mixer; RF/LO input balun circuits; RF/LO matching circuits; RPCVD system; SiGe; base epitaxial layer; heterojunction bipolar transistor; BiCMOS integrated circuits; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Integrated circuit technology; Isolation technology; MMICs; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555239

Filename

1555239