• DocumentCode
    2734952
  • Title

    Using SiGe HBT technology for extreme environment electronics

  • Author

    Cressler, John D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2005
  • fDate
    9-11 Oct. 2005
  • Firstpage
    248
  • Lastpage
    251
  • Abstract
    "Extreme environment" electronics represents an important emerging niche market, and entails the operation of electronic components in surroundings outside the domain of conventional commercial, or even military, specifications. Such extreme environments include operation to very low temperatures (e.g., to 77.3 K or even 4.2 K), operation to very high temperatures (e.g., to 200 or even 300°C), and operation in a radiation-intense setting (e.g., space). We argue that the unique bandgap-engineered features of SiGe HBTs offer great potential to simultaneously satisfy all three extreme environment applications, with little or no process modification, ultimately providing compelling cost advantages at both the IC and system levels.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; radiation hardening (electronics); semiconductor device reliability; SiGe; bandgap-engineered features; electronic components; extreme environment electronics; heterojunction bipolar transistor technology; radiation-intense setting; Application specific integrated circuits; CMOS technology; Consumer electronics; Costs; Electronic components; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Space technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
  • Print_ISBN
    0-7803-9309-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2005.1555243
  • Filename
    1555243