DocumentCode
2734952
Title
Using SiGe HBT technology for extreme environment electronics
Author
Cressler, John D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
248
Lastpage
251
Abstract
"Extreme environment" electronics represents an important emerging niche market, and entails the operation of electronic components in surroundings outside the domain of conventional commercial, or even military, specifications. Such extreme environments include operation to very low temperatures (e.g., to 77.3 K or even 4.2 K), operation to very high temperatures (e.g., to 200 or even 300°C), and operation in a radiation-intense setting (e.g., space). We argue that the unique bandgap-engineered features of SiGe HBTs offer great potential to simultaneously satisfy all three extreme environment applications, with little or no process modification, ultimately providing compelling cost advantages at both the IC and system levels.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; radiation hardening (electronics); semiconductor device reliability; SiGe; bandgap-engineered features; electronic components; extreme environment electronics; heterojunction bipolar transistor technology; radiation-intense setting; Application specific integrated circuits; CMOS technology; Consumer electronics; Costs; Electronic components; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Space technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555243
Filename
1555243
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