Title :
Investigation of technology scaling effect on SiGe HBT oscillator phase noise using impulse sensitivity function
Author :
Tang, Jin ; Niu, Guofu ; Sheridan, David
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
Abstract :
Using impulse sensitivity function (ISF), the upconversion of low-frequency noise to phase noise in SiGe HBTs is investigated as a function of technology scaling. The 1/f noise upconversion under periodic large signal condition is simulated using a cyclostationary model, which is supported by recent SiGe HBT 1/f noise data, and compared with traditional dc current based model. The impact of technology scaling on various ISF is examined, and implications to technology scaling are discussed.
Keywords :
1/f noise; circuit noise; frequency convertors; heterojunction bipolar transistors; oscillators; phase noise; semiconductor device models; sensitivity analysis; 1/f noise upconversion; HBT 1/f noise data; HBT oscillator phase noise; SiGe; cyclostationary model; dc current based model; heterojunction bipolar transistor; impulse sensitivity function; low-frequency noise upconversion; periodic large signal condition; technology scaling effect; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise measurement; Oscillators; Phase noise; Semiconductor device noise; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555246
