DocumentCode
2735007
Title
On the delay times in vertically scaled SiGe HBTs
Author
Agarwal, P. ; Hurkx, G.A.M. ; Donkers, J.J.T.M. ; Slotboom, J.W.
Author_Institution
Philips Res. Leuven, Belgium
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
264
Lastpage
267
Abstract
Delays due to diffusion of minorities are shown to constitute only a small part of the overall delay in vertically scaled devices. Instead, it is shown that charge-storage in the emitter-base space-charge layer is the dominant delay. This sensitivity of the associated delay on the precise band-gap structure near the EB junction is discussed.
Keywords
Ge-Si alloys; delays; energy gap; heterojunction bipolar transistors; semiconductor device models; BiCMOS process technology; SiGe; band-gap structure; bipolar modeling; bipolar process technology; bipolar simulation; charge-storage; delay times; device physics; emitter-base space-charge layer; heterojunction bipolar transistor; vertically scaled HBT; vertically scaled devices; Bipolar transistors; Cutoff frequency; Delay effects; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Modems; Photonic band gap; Silicon germanium; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555247
Filename
1555247
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