Impact of ballast resistor implementations on power performance of SiGe power HBTs

Author

Jiang, Ningyue ; Ma, Zhenqiang ; Ma, Pingxi ; Reddy, Vijay ; Racanelli, Marco

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

2005

fDate

9-11 Oct. 2005

Firstpage

276

Lastpage

279

Abstract

SiGe power HBTs integrated in SiGe BiCMOS with different ballast schemes are developed and compared in terms of large-signal power performance. Design considerations of ballast resistors for SiGe power HBTs are investigated for both common-emitter (CE) and common-base (CB) configurations. The investigation shows that emitter ballast resistors or base ballast resistors should be judiciously used for SiGe power HBTs operating at different frequencies and under different configurations in order to extract the best RF performance from these devices.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; power bipolar transistors; resistors; BiCMOS integrated circuit; SiGe; ballast resistor implementations; base ballast resistors; common-base configuration; common-emitter configuration; emitter ballast resistors; power heterojunction bipolar transistor; BiCMOS integrated circuits; Capacitors; Electronic ballasts; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Resistors; Silicon germanium; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the

Print_ISBN

0-7803-9309-0

Type

conf

DOI

10.1109/BIPOL.2005.1555250

Filename

1555250