LT-GaAs Based Photoconductive Antenna Arrays For Pulsed And CW Operation

Author

Awad, M. ; Nagel, M. ; Kurz, H.

Author_Institution

Inst. of Semicond. Electron., Aachen

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

49

Lastpage

49

Abstract

We present a novel epitaxial lift-off technique for the fabrication of THz antenna array structures on low temperature grown (LT) GaAs. The radiated electric field of the array shows an increase compared to single element emitters, due to the constructive interference of the individual array elements in the emitter far-field. We have demonstrated this emitter in pulsed THz operation, however simulations have shown that this type of structure can also be used for continuous wave (cw) THz generation.

Keywords

III-V semiconductors; antenna arrays; gallium arsenide; photoconductivity; submillimetre wave generation; CW operation; GaAs; constructive interference; continuous wave THz generation; emitters; epitaxial lift-off technique; photoconductive antenna arrays; pulsed operation; radiated electric field; temperature grown GaAs; Antenna arrays; Antenna measurements; Dipole antennas; Etching; Gallium arsenide; Interference; Photoconducting materials; Photoconductivity; Substrates; Transmission line antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368258

Filename

4221992