DocumentCode :
2735202
Title :
Room-temperature fabrication of highly transparent conductive aluminum-doped zinc oxide films
Author :
Chen, C.H. ; Chen, Y.C. ; Hong, S.F. ; Wang, C.L. ; Shih, W.C. ; Tsai, C.P. ; Wu, Y.C. ; Lai, C.H. ; Wei, C.N. ; Bor, H.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Room temperature fabricated aluminum-doped zinc oxide (ZnO:Al) films were deposited by radio-frequency magnetron sputtering under pure Ar ambient. By investigating and controlling the sputtering parameters, such as relative position between target and substrate, and working pressure, high quality ZnO:Al films were obtained. Even without substrate heating during deposition or post annealing process, we were able to fabricate ZnO:Al films on glass and polymer substrate with resistivity in the order of magnitude of 1 × 10-4 ohm-cm and average transmittance over 90% in the visible light region. This indicates that such room temperature fabrication process could obtain high quality ZnO:Al films without thermal degradation and suitable for the application of flexible electronics on temperature sensitive polymer substrates.
Keywords :
II-VI semiconductors; aluminium; flexible electronics; semiconductor growth; semiconductor thin films; sputter deposition; substrates; zinc compounds; ZnO:Al; average transmittance; photovoltaic device; postannealing process; radiofrequency magnetron sputtering; resistivity; room temperature fabrication; substrate heating; temperature 293 K to 298 K; temperature sensitive polymer substrate; thermal degradation; transparent conductive aluminum-doped zinc oxide films; visible light region; Copper; Glass; Heating; Magnetic films; Magnetic properties; Positron emission tomography; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614247
Filename :
5614247
Link To Document :
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