Title :
Limit of nanophotonic light-trapping in solar cells
Author :
Yu, Zongfu ; Raman, Aaswath ; Fan, Shanhui
Author_Institution :
Ginzton Lab., Stanford Univ., Stanford, CA, USA
Abstract :
Establishing the fundamental limit of nanophotonic light-trapping schemes is of paramount importance and is becoming increasingly urgent for current solar cell research. The standard theory of light trapping demonstrated that absorption enhancement in a medium cannot exceed a factor of 4n2 / sin2 θ, where n is the refractive index of the active layer, and θ is the angle of the emission cone in the medium surrounding the cell. This theory, however, is not applicable in the nanophotonic regime. Here we develop a statistical temporal coupled-mode theory of light trapping based on a rigorous electromagnetic approach. Our theory reveals that the standard limit can be substantially surpassed when optical modes in the active layer are confined to deep-subwavelength scale, opening new avenues for highly efficient next-generation solar cells.
Keywords :
electromagnetic field theory; nanophotonics; refractive index measurement; solar cells; statistical analysis; absorption enhancement; active layer; deep subwavelength scale; electromagnetic approach; emission cone angle; nanophotonic light trapping scheme; next generation solar cells research; refractive index; statistical temporal coupled mode theory; Absorption; Charge carrier processes; Films; Indexes; Optical waveguides; Photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614248