Title :
Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy
Author :
Oh, S.J. ; Kang, C. ; Maeng, I.H. ; Cho, N.K. ; Song, J.D. ; Choi, W.J. ; Lee, J.I. ; Son, J.H.
Author_Institution :
Univ. of Seoul, Seoul
Abstract :
We have investigated the carrier capture behavior of n-type modulation-doped InAs/GaAs QDs using THz time-domain spectroscopy (THz TDS) in order to estimate the total number of electrons captured by the QDs. The THz transmission of the sample with QDs (#1) is larger than that of the sample without QDs (#2). From the THz waveforms and subsequent analysis, the #1 sample shows lower conductivity which is resulted from the smaller number of free carriers due to the capture by the QDs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; submillimetre wave spectroscopy; InAs-GaAs; THz TDS; THz time-domain spectroscopy; THz waveforms; carrier capture behavior; free carriers; n-type modulation; quantum dots; Charge carrier density; Conductivity; Electrons; Epitaxial layers; Frequency; Gallium arsenide; Quantum dot lasers; Quantum dots; Spectroscopy; Time domain analysis;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368264
