Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy

Author

Oh, S.J. ; Kang, C. ; Maeng, I.H. ; Cho, N.K. ; Song, J.D. ; Choi, W.J. ; Lee, J.I. ; Son, J.H.

Author_Institution

Univ. of Seoul, Seoul

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

55

Lastpage

55

Abstract

We have investigated the carrier capture behavior of n-type modulation-doped InAs/GaAs QDs using THz time-domain spectroscopy (THz TDS) in order to estimate the total number of electrons captured by the QDs. The THz transmission of the sample with QDs (#1) is larger than that of the sample without QDs (#2). From the THz waveforms and subsequent analysis, the #1 sample shows lower conductivity which is resulted from the smaller number of free carriers due to the capture by the QDs.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; submillimetre wave spectroscopy; InAs-GaAs; THz TDS; THz time-domain spectroscopy; THz waveforms; carrier capture behavior; free carriers; n-type modulation; quantum dots; Charge carrier density; Conductivity; Electrons; Epitaxial layers; Frequency; Gallium arsenide; Quantum dot lasers; Quantum dots; Spectroscopy; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368264

Filename

4221998