Emerging carbon nanotube electronic circuits, modeling and performance

Author

Xu, Y. ; Srivastava, Anurag ; Marulanda, J.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA

fYear

2008

fDate

10-13 Aug. 2008

Firstpage

566

Lastpage

569

Abstract

In this paper, a CNT interconnect model is presented and combined with a CNT-FET model to study the performance of CNT-FET circuits at very high frequencies. An all complementary CNT-FET inverter pair using CNT interconnection is modeled and characterized. Cadence/Spectre simulations show that CNT-FET circuits can operate at GHz frequencies and CNT interconnects are able to provide enough bandwidth for GHz operation of CNT-FETs circuits.

Keywords

carbon nanotubes; field effect integrated circuits; integrated circuit interconnections; integrated circuit modelling; nanoelectronics; CNT interconnect model; CNT interconnection; CNT-FET circuits; CNT-FET model; Cadence/Spectre simulations; all complementary CNT-FET inverter pair; carbon nanotube electronic circuits; Carbon nanotubes; Charge carrier processes; Electronic circuits; Electrons; Equations; Fluid dynamics; Frequency; Integrated circuit interconnections; Integrated circuit modeling; Quantum mechanics;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on

Conference_Location

Knoxville, TN

ISSN

1548-3746

Print_ISBN

978-1-4244-2166-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2008.4616862

Filename

4616862