Characteristics of MIS solar cells using sputtering SiO2 insulating layers

In this study, the characteristics of both p-type and n-type Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO₂ insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO₂ insulating layer and a hydrogen (H₂) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO₂ insulating layer can be greatly enhanced by depositing a SiN_x passivation layer on top. It suggests that a sputtering SiO₂ insulating layer is a good alternative insulating layer for MIS solar cells.