Title :
Effect of annealing for Ag-In-S thin films prepared by a vacuum evaporation method
Author :
Akaki, Yoji ; Yamashita, Kyohei ; Yoshitake, Tsuyoshi ; Nakamura, Shigeyuki ; Seto, Satoru ; Tokuda, Takahiro ; Yoshino, Kenji
Author_Institution :
Dept. of Electr. & Comput. Eng., Miyakonojo Nat. Coll. of Technol., Miyazaki, Japan
Abstract :
Ag-In-S thin films deposited by a single-source thermal evaporation method were annealed in H2S atmosphere from 300 to 450 °C for 60 min. after the evaporation. All the films annealed above 300 °C were obtained chalcopyrite AgInS2 crystal phase. The composition ratios of Ag, In and S atoms become close to stoichiometry with increasing the annealing temperature. The grain size of the AgInS2 crystal in the films annealed at 400 °C are approximately 1.5~4 μm.
Keywords :
annealing; chalcogenide glasses; grain size; indium compounds; semiconductor growth; semiconductor thin films; silver compounds; stoichiometry; ternary semiconductors; vacuum deposition; Ag-In-S thin films; AgInS2; annealing temperature; chalcopyrite AgInS2 crystal phase; composition ratios; grain size; hydrogen sulfide atmosphere; single-source thermal evaporation method; stoichiometry; temperature 300 degC to 450 degC; time 60 min; vacuum evaporation method; Annealing; Chemicals; Diffraction; Grain size; Optical films;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614345
