• DocumentCode
    273572
  • Title

    New technology enables a breakthrough in DC/DC converter design

  • Author

    Pritchard, N.B.

  • Author_Institution
    SGS-Thomson Microelectron., London, UK
  • fYear
    1988
  • fDate
    13-15 Jul 1988
  • Firstpage
    62
  • Lastpage
    66
  • Abstract
    Until a few years ago the DC to DC converter function had been implemented with discrete transistors and either separate voltage comparators and references or monolithic PWM controller integrated circuits. Being a leader in the power integrated circuit field, SGS-Thomson Microelectronics saw the possibility to integrate the various desirable functions into one monolithic structure including the power stage. The solution was provided by a new technology that SGS-Thomson was developing, called Multipower-BCD (BCD stands for bipolar, CMOS, DMOS). This technology combines low level logic and linear circuitry and power DMOS transistors onto the same piece of silicon. Multipower-BCD is a relatively straightforward 10-14 mask process utilising noncritical manufacturing techniques. The author discusses this new technology
  • Keywords
    integrated circuit technology; monolithic integrated circuits; power convertors; CMOS; DC/DC converter design; DMOS; Multipower-BCD; SGS-Thomson Microelectronics; bipolar; linear circuitry; low level logic; monolithic structure; power DMOS transistors;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Variable-Speed Drives, Third International Conference on
  • Conference_Location
    London
  • Print_ISBN
    0-85296-364-5
  • Type

    conf

  • Filename
    23314