DocumentCode
273574
Title
Computer-aided investigation of the turn-off performance of GTO thyristors
Author
Gaubert, J. ; Khatir, Z. ; Leturcq, Ph.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fYear
1988
fDate
13-15 Jul 1988
Firstpage
71
Lastpage
74
Abstract
A one-dimensional numerical model has been derived for the parametric study of the turn-off performance of gate-turn-off thyristors. This model takes into account all major physical effects and represents the interactions between the inner device charge dynamics and the operation of an external circuit. It is shown that, in spite of the one-dimensional simplification, this model provides an accurate description of GTO turn-off and can be used as a computer aid for circuit design and device selection as well as for device structure design
Keywords
circuit CAD; semiconductor device models; thyristors; GTO thyristors; circuit CAD; external circuit; inner device charge dynamics; one-dimensional numerical model; turn-off performance;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable-Speed Drives, Third International Conference on
Conference_Location
London
Print_ISBN
0-85296-364-5
Type
conf
Filename
23316
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