• DocumentCode
    273578
  • Title

    A high current, ultrasonic GTO thyristor cathode switch

  • Author

    Goodfellow, J.K. ; Williams, Barry W.

  • Author_Institution
    Heriot-Watt University, Edinburgh
  • fYear
    1988
  • fDate
    13-15 Jul 1988
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    The cascode switch, the series connection of a high voltage bipolar device and low voltage MOSFET, provides high power and high frequency in a small volume. The cascode switch has many advantages, reverse gate or base current is equal to the turn off collector or anode current level and can be established at a rate of greater than 1000 A/μs. The authors discuss a gate turn off thyristor (GTO) and bipolar transistor (BJT) cascode switch with similar power ratings of 180 kVA operating on a 500 V to 700 V DC rail and with load currents of up to 300 A. The circuit was developed for the BJT cascode or emitter switch operating at 150 kVA and 50 kHz and subsequently applied to the GTO cascode or cathode switch. The authors show the results achieved and compare the two types of switch
  • Keywords
    bipolar transistors; insulated gate field effect transistors; semiconductor switches; thyristor applications; 150 kVA; 180 kVA; 300 A; 50 kHz; 500 to 700 V; anode current level; cascode switch; emitter switch; high voltage bipolar device; load currents; low voltage MOSFET; turn off collector; ultrasonic GTO thyristor cathode switch;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Variable-Speed Drives, Third International Conference on
  • Conference_Location
    London
  • Print_ISBN
    0-85296-364-5
  • Type

    conf

  • Filename
    23321