DocumentCode
273578
Title
A high current, ultrasonic GTO thyristor cathode switch
Author
Goodfellow, J.K. ; Williams, Barry W.
Author_Institution
Heriot-Watt University, Edinburgh
fYear
1988
fDate
13-15 Jul 1988
Firstpage
91
Lastpage
94
Abstract
The cascode switch, the series connection of a high voltage bipolar device and low voltage MOSFET, provides high power and high frequency in a small volume. The cascode switch has many advantages, reverse gate or base current is equal to the turn off collector or anode current level and can be established at a rate of greater than 1000 A/μs. The authors discuss a gate turn off thyristor (GTO) and bipolar transistor (BJT) cascode switch with similar power ratings of 180 kVA operating on a 500 V to 700 V DC rail and with load currents of up to 300 A. The circuit was developed for the BJT cascode or emitter switch operating at 150 kVA and 50 kHz and subsequently applied to the GTO cascode or cathode switch. The authors show the results achieved and compare the two types of switch
Keywords
bipolar transistors; insulated gate field effect transistors; semiconductor switches; thyristor applications; 150 kVA; 180 kVA; 300 A; 50 kHz; 500 to 700 V; anode current level; cascode switch; emitter switch; high voltage bipolar device; load currents; low voltage MOSFET; turn off collector; ultrasonic GTO thyristor cathode switch;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable-Speed Drives, Third International Conference on
Conference_Location
London
Print_ISBN
0-85296-364-5
Type
conf
Filename
23321
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