DocumentCode :
2735868
Title :
Investigation of the effect of compensation ratio (RC) on solar cells fabricated with solar grade (SoG) czochralski silicon
Author :
Camacho-Cuadrado, J. ; Cooper, I.B. ; Ebong, A. ; Bausch, G. ; Tulloch, W. ; Beaucarne, G. ; Good, E. ; Rohatgi, A.
Author_Institution :
Univ. Center of Excellence for Photovoltaics Res. & Educ., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Fabrication and characterization of monocrystalline silicon (Si) solar cells was performed on wafers containing compensated solar grade Si. The wafers used in these experiments were sawn from ingots grown with different compensation ratios. Efficiencies in the range of 17.0-17.8% were obtained from all the different groups of wafers. Efficiency was observed to decrease as compensation ratio increased. After processing, wafers were put under light to observe the effects of light induced degradation (LID). Degradation was seen on all cells, with the greatest impact on wafers with the highest compensation ratio (between 0.5-1% absolute drop in efficiency). Finally, processed wafers were selected from some groups to measure the bulk lifetime. The trend in bulk lifetime follows the trend in efficiency.
Keywords :
silicon; solar cells; Si; compensation ratio; czochralski silicon; ingots; light induced degradation; monocrystalline silicon solar cells; solar grade; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614360
Filename :
5614360
Link To Document :
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