Title :
A 16M SRAM with improved characteristics using DRAM technology
Author :
Kihara, Yuji ; Nakashima, Yasushi ; Izutsu, Takashi ; Nakamoto, Masayuki ; Konishi, Yasuhiro ; Yoshihara, Tsutomu
Author_Institution :
Renesas Technol. Corp., Hyogo
Abstract :
A 16Mbit low power SRAM with 0.98mum2 cells using 0.15mum DRAM and TFT technology has been developed. A new type memory cell technology achieves enough low power, low cost and high soft error immunity without large investment. By these improved characteristics some customers at industrial machines and handy devices decided to use this new type of SRAM by compatibility with SRAM
Keywords :
DRAM chips; SRAM chips; low-power electronics; thin film transistors; 0.15 micron; DRAM technology; SRAM; TFT technology; memory cell technology; CMOS technology; Costs; Error correction codes; Flip-flops; Investments; Mass production; Random access memory; Read-write memory; Thin film transistors; Voltage;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9162-4
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251778
