DocumentCode :
2735902
Title :
21.1 % efficient perc silicon solar cells on large scale by using inline sputtering for metallization
Author :
Reinwand, Dirk ; Specht, Jan ; Stüwe, David ; Seitz, Sonja ; Nekarda, Jan-Frederik ; Biro, Daniel ; Preu, Ralf ; Trassl, Roland
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst. (ISE), Freiburg, Germany
fYear :
2010
fDate :
20-25 June 2010
Abstract :
This work presents the first results for the production of highly efficient solar cells with industrial processes using the PERC structure. Two batches of FZ and Cz wafers were conducted to prove the applicability of a transfer from the clean room to an industrial standard. The front and rear side metallization was done by a new pilot system using the sputtering technology. The investigation of solar cell results, series resistance, contact resistance and a optical analysis are discussed later on.
Keywords :
metallisation; silicon; solar cells; sputtering; PERC structure; Si; clean room; contact resistance; inline sputtering; metallization; optical analysis; passivated emitter and rear cell; series resistance; silicon solar cells; Annealing; Conductivity; Contact resistance; Photovoltaic cells; Resistance; Silicon; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614363
Filename :
5614363
Link To Document :
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