Title : 
Study of Tunable Terahertz-Wave Generation in Isotropic Semiconductor Crystals Based on Dual-Wavelength KTP-OPO Operating near Degenerate Point
         
        
            Author : 
Sun, B. ; Yao, J.Q. ; Wang, Z. ; Zhao, P. ; Lu, Y. ; Liu, H. ; Xu, D.G.
         
        
            Author_Institution : 
Tianjin Univ., Tianjin
         
        
        
        
        
        
            Abstract : 
Continuously tunable coherent terahertz-wave generation from 0.1 to 2.7 THz can be achieved in isotropic semiconductor nonlinear crystals by difference frequency mixing. We experimentally demonstrated a high-power, narrow-linewidth, angle-tuned pulsed dual-wavelength KTP-OPO operating near the degenerate point, which was used as the pump source for terahertz-wave generation. We theoretically studied the feasibility of the cross-Reststrahlen band dispersion compensation phase matching in the collinear optical mixing technique in this process. A theoretical analysis of perfect phase-matching conditions and coherence length for the ZnTe crystal was presented, according to its optical dispersion property.
         
        
            Keywords : 
II-VI semiconductors; optical dispersion; optical parametric oscillators; potassium compounds; submillimetre wave generation; titanium compounds; zinc compounds; KTP; KTP-OPO; ZnTe; collinear optical mixing; compensation phase matching; cross-Reststrahlen band dispersion; degenerate point; difference frequency mixing; dual wavelength; frequency 0.1 THz to 2.7 THz; isotropic crystals; isotropic semiconductor crystals; optical dispersion; optical parametric oscillators; pump source; semiconductor nonlinear crystals; tunable terahertz-wave generation; Coherence; Crystals; Frequency conversion; Nonlinear optics; Optical frequency conversion; Optical mixing; Optical pulse generation; Optical pumping; Tunable circuits and devices; Zinc compounds;
         
        
        
        
            Conference_Titel : 
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
         
        
            Conference_Location : 
Shanghai
         
        
            Print_ISBN : 
1-4244-0400-2
         
        
            Electronic_ISBN : 
1-4244-0400-2
         
        
        
            DOI : 
10.1109/ICIMW.2006.368315