DocumentCode :
2736055
Title :
Investigation of hetero-interface and junction properties in silicon heterojunction solar cells
Author :
Das, Ujjwal ; Hegedus, Steven ; Zhang, Lulu ; Appel, Jesse ; Rand, Jim ; Birkmire, Robert
Author_Institution :
Inst. of Energy Conversion, Univ. of Delaware, Newark, DE, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
The amorphous silicon (a-Si:H) - crystalline silicon (c-Si) heterojunction (SHJ) solar cell fill factor (FF) is very sensitive to the properties of c-Si surface, process parameters of thin a-Si:H layers, properties of transparent conducting front electrode, and all of their interfaces. In this work, quality of hetero-interface and junction properties in n-type SHJ solar cells were investigated by; (i) suns VOC under white, blue, and infrared light; (ii) dark and light JV; and (iii) quantum efficiency (QE) with and without voltage and light bias. Analysis of all these measurements suggest an anomalous “S” shape JV curve can arise due to at least two separate reasons; (a) existence of a large barrier for hole transport with excellent front surface passivation, and (b) existence of an opposing diode/Schottky barrier in the hetero emitter side of a SHJ solar cell. Both of the above-mentioned interface and/or junction properties severely affect minority carrier collection in SHJ cells.
Keywords :
Schottky diodes; electrochemical electrodes; elemental semiconductors; semiconductor heterojunctions; silicon; solar cells; Schottky barrier diode; Si:H; crystalline silicon heterojunction solar cells; fill factor; front surface passivation; hetero emitter side; heterointerface properties; heterojunction properties; hole transport; infrared light; junction properties; minority carrier collection; n-type SHJ solar cells; process parameters; quantum efficiency; transparent conducting front electrode; Junctions; Lighting; Passivation; Photovoltaic cells; Shape; Silicon; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614372
Filename :
5614372
Link To Document :
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