Title :
GaAs surface passivation with MBE grown GaS thin film
Author :
Okamoto, Naoya ; Hara, Naoki ; Yokoyama, Mitsunori ; Tanaka, Hitoshi
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
We report on the successful GaAs surface passivation with GaS thin film grown by MBE employing the single precursor, tertiarybutyl-gallium sulfide-cubane ([(t-Bu)GaS]4). GaAs bandgap PL intensity increased by passivating with GaS and has been maintained for a year. Furthermore, we investigated the relationship between the interface state density and the GaAs surface reconstruction before GaS passivation. The PL intensity for c(4×4)As was largest among the surface reconstructions investigated. Also, a minimum interface state density as low as 5×1010 eV-1 cm-2 was obtained for an Al/GaS/n-GaAs MIS structure of c(4×4)As. In addition, we demonstrated the feasibility of GaS passivation for device applications
Keywords :
III-V semiconductors; III-VI semiconductors; gallium arsenide; gallium compounds; interface states; molecular beam epitaxial growth; passivation; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface reconstruction; GaAs; GaS-GaAs; MBE grown GaS thin film; MIS structure; device applications; interface state density; photoluminescence intensity; surface passivation; surface reconstruction; tertiarybutyl-gallium sulfide-cubane; Gallium arsenide; Interface states; MISFETs; MOCVD; Molecular beam epitaxial growth; Passivation; Surface cleaning; Surface reconstruction; Temperature; Transistors;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711599
