DocumentCode
2736157
Title
Simulation of chemical beam epitaxy with triethylgallium and tris(dimethylamino) arsine
Author
Shi, B.Q. ; Tu, C.W.
Author_Institution
Dept. of Chem. Eng., California Univ., San Diego, La Jolla, CA, USA
fYear
1997
fDate
8-11 Sep 1997
Firstpage
143
Lastpage
146
Abstract
A reaction model for the epitaxial growth of GaAs by chemical beam epitaxy using triethylgallium and tris(dimethylamino) arsine is presented. The model is developed by properly combining surface decomposition mechanisms of the two metalorganic species. Computer simulations based on the model are carried out to make comparison with the experimental observations for this growth system. The model is shown to provide very good agreement with the growth kinetics observed
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; semiconductor process modelling; GaAs; chemical beam epitaxy; computer simulations; growth kinetics; reaction model; surface decomposition; triethylgallium; tris(dimethylamino) arsine; Atomic measurements; Chemicals; Epitaxial growth; Gallium arsenide; Hydrogen; Kinetic theory; Molecular beam epitaxial growth; Semiconductor process modeling; Temperature; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711600
Filename
711600
Link To Document