Electrics Characteristic of Terahertz Generation with GaAs Photoconductive Dipole Antenna

Author

Xu, Ming ; Shi, Wei

Author_Institution

Xi´´an Univ. of Technol., Xi´´an

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

115

Lastpage

115

Abstract

Experiment of terahertz generation with photoconductive dipole antenna based on semi-insulating GaAs is researched. Terahertz waveform with about 1 ps width is observed. The frequency spectrums of the terahertz radiation range over 1 THz, and their peaks are at roughly 0.3 THz. The electrics characteristic of GaAs simulated using the finite difference time domain method is presented.

Keywords

III-V semiconductors; dipole antennas; finite difference time-domain analysis; gallium arsenide; photoconducting devices; submillimetre wave antennas; submillimetre wave generation; GaAs; electrics characteristic; finite difference time domain method; photoconductive dipole antenna; semiinsulating material; terahertz generation; terahertz radiation range; terahertz waveform; Character generation; Dipole antennas; Electric variables; Electrodes; Finite difference methods; Frequency; Gallium arsenide; Photoconducting devices; Photoconductivity; Receiving antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368323

Filename

4222057