A 142dB Dynamic Range CMOS Image Sensor with Multiple Exposure Time Signals

Author

Park, Jong-Ho ; Mase, Mitsuhito ; Kawahito, Shoji ; Sasaki, Masaaki ; Akamori, Yasuo ; Ohta, Yukihiro

Author_Institution

Graduate Sch. of Electron. Sci. & Technol., Shizuoka Univ., Jouhoku

fYear

2005

fDate

Nov. 2005

Firstpage

85

Lastpage

88

Abstract

An ultra wide dynamic range image sensor with a linear response is presented. The proposed extremely short accumulation (ESA) signal readout technique enables the dynamic range of image sensor to be expanded up to 142dB. Including the ESA signals, total of 4 different accumulation time signals are read out in one frame based on burst readout mode. To achieve the high-speed readout required for the multiple exposure signals, column parallel A/D converters are integrated at the upper and lower sides of pixel array. The improved column parallel cyclic 12-b ADC with a built-in CDS circuit has the differential non-linearity of plusmn0.3LSB

Keywords

CMOS image sensors; analogue-digital conversion; 12 bit; CMOS image sensor; accumulation time signals; built-in CDS circuit; burst readout mode; column parallel A/D converters; extremely short accumulation signal readout; linear response; multiple exposure time signals; CMOS image sensors; CMOS technology; Capacitors; Dynamic range; Educational institutions; Image sensors; Lighting; Noise reduction; Pixel; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Asian Solid-State Circuits Conference, 2005

Conference_Location

Hsinchu

Print_ISBN

0-7803-9163-2

Electronic_ISBN

0-7803-9163-2

Type

conf

DOI

10.1109/ASSCC.2005.251813

Filename

4017537