• DocumentCode
    2736367
  • Title

    An Experimental 1Mb 0.11um 4.5F2 1.8Volt Multilevel Vertical Split Gate Source Side Injection Test Vehicle for Giga-Bit Density NOR Flash Memory

  • Author

    Tran, Hai V. ; Ly, A. ; Sarin, V. ; Nguyen, S.T. ; Nguyen, Ha Q. ; Hoang, L. ; Hyun Bai Kim ; Nojima, I. ; Lee, Daewoo

  • Author_Institution
    Bomy Chen Silicon Storage Technol. Inc., Sunnyvale, CA
  • fYear
    2005
  • fDate
    1-3 Nov. 2005
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    An experimental 0.11mum 4.5F2 1.8V multilevel 1Mb vertical floating gate split gate source side injection (SSI) test vehicle for Giga-bit NOR flash memory is shown for the first time. Novel coupled sense line programming for 25mV precise charge placement and novel low cell current ~10ua mode source follower sense amplifier is shown to enable high speed high density G-bit MLC NOR flash memory system
  • Keywords
    NOR circuits; flash memories; 0.11 micron; 1 MByte; 1.8 V; 25 mV; Giga-bit NOR flash memory; coupled sense line programming; current mode source follower sense amplifier; multilevel vertical split gate source side injection test vehicle; Circuits; Explosives; Flash memory; Lab-on-a-chip; Nonvolatile memory; Silicon; Split gate flash memory cells; Testing; Threshold voltage; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Asian Solid-State Circuits Conference, 2005
  • Conference_Location
    Hsinchu
  • Print_ISBN
    0-7803-9162-4
  • Electronic_ISBN
    0-7803-9163-2
  • Type

    conf

  • DOI
    10.1109/ASSCC.2005.251681
  • Filename
    4017547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2736367