Title :
The Study of Improving the Performance of HgCdTe Photovoltaic Detectors with Anti-reflection Coating
Author :
Liao, Q.J. ; Hu, X.N.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
Thls paper presents a method to improve HgCdTe detectors´ performance by anti-reflection coating. Back-illuminated HgCdTe photovoltaic detectors have been fabricated on molecular beam epitaxy (MBE) HgCdTe layer on top of GaAs substrate by ion implantation doping. ZnS film is deposited on the surface of GaAs substrate by magnetron sputtering. With this AR coating, the black body detectivity, responsivity and quantum efficiency have the increase of 41%, 45% and 100% respectively. That is a great help to improve the property of HgCdTe detectors.
Keywords :
III-VI semiconductors; antireflection coatings; gallium arsenide; ion implantation; mercury compounds; molecular beam epitaxial growth; photodetectors; sputtered coatings; zinc compounds; GaAs; HgCdTe; ZnS; antireflection coating; back-illuminated photovoltaic detectors; black body detectivity; ion implantation doping; magnetron sputtering; molecular beam epitaxy; Coatings; Detectors; Doping; Gallium arsenide; Ion implantation; Molecular beam epitaxial growth; Photovoltaic systems; Solar power generation; Substrates; Zinc compounds;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368340
