Title :
A 1.0-V 15.6-dBm 39.5%-PAE CMOS Class-E Power Amplifier with On-Chip Transformer for Q Enhancement
Author :
Song, Ping ; Howard, Cam Luong
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol.
Abstract :
A 1-V fully-differential two-stage CMOS class-E power amplifier operating at 2.4 GHz is presented. An on-chip transformer-feedback topology is applied in the pre-amplifier in order to provide a high swing to drive the second stage. Injection-mode-locking topology is employed in the second stage to achieve high output power and high efficiency. Implemented in a 0.18-mum CMOS process, the amplifier delivers an output power of 15.6dBm with 39.5% PAE at a 1-V supply and an output power of 20.3dBm with 43% PAE at a 1.8-V supply, respectively
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; circuit feedback; injection locked amplifiers; preamplifiers; 0.18 micron; 1.0 V; 1.8 V; 2.4 GHz; CMOS process; class-E power amplifier; feedback topology; injection mode locking topology; on-chip transformer; preamplifier; Bonding; CMOS process; CMOS technology; Circuit topology; Inductance; Optimized production technology; Power amplifiers; Power engineering and energy; Power generation; Switches;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9163-2
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251685
