A 1.0-V 15.6-dBm 39.5%-PAE CMOS Class-E Power Amplifier with On-Chip Transformer for Q Enhancement

Author

Song, Ping ; Howard, Cam Luong

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol.

fYear

2005

fDate

Nov. 2005

Firstpage

141

Lastpage

144

Abstract

A 1-V fully-differential two-stage CMOS class-E power amplifier operating at 2.4 GHz is presented. An on-chip transformer-feedback topology is applied in the pre-amplifier in order to provide a high swing to drive the second stage. Injection-mode-locking topology is employed in the second stage to achieve high output power and high efficiency. Implemented in a 0.18-mum CMOS process, the amplifier delivers an output power of 15.6dBm with 39.5% PAE at a 1-V supply and an output power of 20.3dBm with 43% PAE at a 1.8-V supply, respectively

Keywords

CMOS analogue integrated circuits; UHF power amplifiers; circuit feedback; injection locked amplifiers; preamplifiers; 0.18 micron; 1.0 V; 1.8 V; 2.4 GHz; CMOS process; class-E power amplifier; feedback topology; injection mode locking topology; on-chip transformer; preamplifier; Bonding; CMOS process; CMOS technology; Circuit topology; Inductance; Optimized production technology; Power amplifiers; Power engineering and energy; Power generation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Asian Solid-State Circuits Conference, 2005

Conference_Location

Hsinchu

Print_ISBN

0-7803-9163-2

Electronic_ISBN

0-7803-9163-2

Type

conf

DOI

10.1109/ASSCC.2005.251685

Filename

4017551