Title :
Plasma Wave HEMTs for THz applications
Author :
Shchepetov, A. ; Roelens, Y. ; Bollaert, S. ; Cappy, A. ; Dyakonova, N. ; Knap, W. ; Lusakowski, J. ; Teppe, F. ; El Fatimy, A. ; Dyakonov, M.
Author_Institution :
IEMN-DHS UMR CNRS, Villeneuve d´´Ascq
Abstract :
New THz chip solid-state detectors and sources are waited for many applications. The idea of new sources and detectors, based on the oscillations of bidimensional plasma, was theoretically and experimentally demonstrated. We present technological process of nanometric devices dedicated to THz emission. In this structure, a MIM gate-source capacitance is integrated to HEMT to achieve the boundary condition of plasma wave generation and to keep possible the gate biasing, necessary for frequency tuning. High electron mobility material like InAlAs/GalnAs heterostructure is used otherwise the plasma wave is dumped by electron scattering. Electrical and THz measurements are realized.
Keywords :
MIM devices; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; plasma light propagation; plasma oscillations; plasma waves; submillimetre wave transistors; InAlAs-GaInAs; InAlAs/GalnAs heterostructure; MIM gate-source capacitance; THz chip solid-state detectors; THz emission; THz measurements; bidimensional plasma oscillations; electrical measurement; electron scattering; frequency tuning; gate biasing; high electron mobility material; nanometric devices; plasma wave HEMTs; plasma wave generation; Detectors; Electron mobility; HEMTs; MODFETs; Nanoscale devices; Plasma applications; Plasma devices; Plasma sources; Plasma waves; Solid state circuits;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368344
