Mechanism Analysis of Periodicity and Weakening Surge of GaAs Photoconductive Semiconductor Switches

Author

Tian, Liqiang ; Wang, Xinmei ; Shi, Wei

Author_Institution

Xi´´an Univ. of Technol., Xi´´an

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

137

Lastpage

137

Abstract

The periodicity and weakening surge of GaAs Photoconductive Semiconductor Switches is analyzed. We think periodicity and weakening surge of the output current waveform is caused by self-excitation of the circuit. The electric field threshold and maintenance field of Gunn threshold electric field are modulated by the AC electric field; the output waveform became two main modes of trans-electron oscillator, namely delay dipole domain mode and quenched dipole domain mode.

Keywords

Gunn effect; III-V semiconductors; electric fields; gallium arsenide; oscillators; photoconducting switches; AC electric field; GaAs; Gunn threshold electric field; delay dipole domain mode; mechanism analysis; periodicity; photoconductive semiconductor switches; quenched dipole domain mode; self-excitation; trans-electron oscillator; weakening surge; Circuits; Delay; Electric fields; Gallium arsenide; Gunn devices; Optical pulse generation; Optical switches; Photoconducting devices; Power semiconductor switches; Surges;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368345

Filename

4222079