Title :
Mechanism Analysis of Periodicity and Weakening Surge of GaAs Photoconductive Semiconductor Switches
Author :
Tian, Liqiang ; Wang, Xinmei ; Shi, Wei
Author_Institution :
Xi´´an Univ. of Technol., Xi´´an
Abstract :
The periodicity and weakening surge of GaAs Photoconductive Semiconductor Switches is analyzed. We think periodicity and weakening surge of the output current waveform is caused by self-excitation of the circuit. The electric field threshold and maintenance field of Gunn threshold electric field are modulated by the AC electric field; the output waveform became two main modes of trans-electron oscillator, namely delay dipole domain mode and quenched dipole domain mode.
Keywords :
Gunn effect; III-V semiconductors; electric fields; gallium arsenide; oscillators; photoconducting switches; AC electric field; GaAs; Gunn threshold electric field; delay dipole domain mode; mechanism analysis; periodicity; photoconductive semiconductor switches; quenched dipole domain mode; self-excitation; trans-electron oscillator; weakening surge; Circuits; Delay; Electric fields; Gallium arsenide; Gunn devices; Optical pulse generation; Optical switches; Photoconducting devices; Power semiconductor switches; Surges;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368345
