DocumentCode :
2736503
Title :
Fabrication and Characterization of InGaAlAs/InP based Uni-Traveling-Carrier Photodiodes
Author :
Vukusic, J. ; Sunnerud, H. ; Wiberg, A. ; Sadeghi, M. ; Andrekson, P. ; Stake, J.
Author_Institution :
Chalmers Univ. of Technol., Goteborg
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
138
Lastpage :
138
Abstract :
We have fabricated and characterized InGaAlAs/InP uni-traveling-carrier photodiodes intended for photo-mixing and data-corn applications. Bandwidths up to 60GHz were recorded with 8.5mum diameter devices for which a matched, integrated antenna-detector circuit has been designed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; photodiodes; photolithography; InGaAlAs-InP; carrier photodiodes; data corn; integrated antenna-detector circuit; photo mixing; uni-traveling photodiodes; Antenna measurements; Bandwidth; Detectors; Fabrication; Indium phosphide; Indium tin oxide; Integrated circuit measurements; Optical modulation; Photodiodes; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368346
Filename :
4222080
Link To Document :
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