DocumentCode
2736503
Title
Fabrication and Characterization of InGaAlAs/InP based Uni-Traveling-Carrier Photodiodes
Author
Vukusic, J. ; Sunnerud, H. ; Wiberg, A. ; Sadeghi, M. ; Andrekson, P. ; Stake, J.
Author_Institution
Chalmers Univ. of Technol., Goteborg
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
138
Lastpage
138
Abstract
We have fabricated and characterized InGaAlAs/InP uni-traveling-carrier photodiodes intended for photo-mixing and data-corn applications. Bandwidths up to 60GHz were recorded with 8.5mum diameter devices for which a matched, integrated antenna-detector circuit has been designed.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; photodiodes; photolithography; InGaAlAs-InP; carrier photodiodes; data corn; integrated antenna-detector circuit; photo mixing; uni-traveling photodiodes; Antenna measurements; Bandwidth; Detectors; Fabrication; Indium phosphide; Indium tin oxide; Integrated circuit measurements; Optical modulation; Photodiodes; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368346
Filename
4222080
Link To Document