DocumentCode :
2736577
Title :
The Monte Carlo method for semiconductor device simulation
Author :
Kelsall, R.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
fYear :
1995
fDate :
34792
Firstpage :
42430
Lastpage :
42434
Abstract :
There can be little doubt that the Monte Carlo method for semiconductor device simulation has enormous power as a research tool. It represents a detailed physical model of the semiconductor material(s), and provides a high degree of insight into the microscopic transport processes. However, if the authority ascribed to Monte Carlo models of devices at 1μm feature size is to be maintained for devices below O.1μm, modelling of the fundamental physics must be further improved. And if the Monte Carlo method is to be successful as a semiconductor device design tool, the device model must be made more realistic. Success in the industrial sector depends on this, but also on achieving fast run-times optimisation - where the scope and need for ingenuity is now greatest
Keywords :
Monte Carlo methods; semiconductor device models; Monte Carlo method; design; modelling; run-times; semiconductor device simulation; transport processes;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Physical Modelling of Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19950428
Filename :
478366
Link To Document :
بازگشت