DocumentCode :
2736590
Title :
Terahertz pulse generation with LT-GaAs photoconductive antenna
Author :
Cui, L.J. ; Zeng, Y.P. ; Zhao, G.Z.
Author_Institution :
Chinese Acad. of Sci., Beijing
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
143
Lastpage :
143
Abstract :
Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250degC on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600degC under As-rich condition. THz emitters were fabricated on this LT-GaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtained with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.
Keywords :
III-V semiconductors; carrier lifetime; dipole antennas; gallium arsenide; optical pulse generation; photoconducting devices; submillimetre wave antennas; submillimetre wave generation; time resolved spectroscopy; EPI GEN-II solid-source MBE system; GaAs; THz emission efficiency; THz emitters; bandwidth 2.75 THz; carrier lifetimes; in situ annealing; low-temperature-grown GaAs; photoconductive antenna; photoconductive dipole antenna gaps; pump-probe spectroscopy; semiinsulating GaAs (001) substrate; size 1 mum; spectral bandwidth; temperature 250 C; temperature 600 C; terahertz pulse generation; time 0.469 ps; time 10 min; time 3.759 ps; time domain spectroscopy; time-resolved transient reflection; Antenna measurements; Bandwidth; Charge carrier lifetime; Detectors; Gallium arsenide; Photoconducting materials; Photoconductivity; Pulse generation; Spectroscopy; Superconducting materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368351
Filename :
4222085
Link To Document :
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